KM44C256BL

The features of KM440256BL can be summarized as (1)fast page mode operation; (2)CAS-belore-RAS refresh capebility; (3)RAS-only and hidden refresh capablility; (4)TTL compatible inpute and output; (5)early write or output enable controlled write; (6)common I/O using early write; (7)single +5V ±10% power supply; (8)low power dissipation ICC5: 200A, ICC7: 300A (battery back up mode); (9)512 cycles/64ms refresh; (10)JEDEC standard pinout; (11)available in plastic DIP, SOJ and ZIP.

The samsung KM440256BL is a CMOS high speed 262,144*4 dynamic random access memory. its design is optimized for high performance applications such as mainframes and mini computers, graphics and high performance microprocessor systems. The KM44C256BL features fast page mode operation which allows hlgh speed, random access of memory cells wlthln the same row. CAS-before-RAS refresh capablility provides onchip auto-refresh as an alternative to RAS-only refresh. All lnputs and outputs are fully TTL compatible. The KM44C256BL is fabricated using samsung's advanced CMOS process.

The absolute maximum ratings of KM440256BL are (1)voltage on any pin relatiye to Vss VIN, VOUT: -1 to +7.0V; (2)voltage on VCC supply relative to VSC VCC: -1 to +7.0V; (3)storage temperature Tstg: -55 to +150°C; (4)power dissipation PD: 600mW; (5)short cirouit output current IOS: 50mA(Permanent device damage may occur If "absolute maximum ratings" are exceeded. functional operation should be restricted to the conditions as detailed in- the-operatlonal sections of this data sheet. exposure to absolute maximum ratlng condltlons for extended- periods may affect devlce rellablllty.