MFG:Other Category:Other
Category: Other
MFG: Other
Description: The KM44C256D is a kind of 262,144*4 CMOS DRAM (dynamic random access memory). Fast Page Mode offers high speed random ac...
The KM44C256D is a kind of 262,144*4 CMOS DRAM (dynamic random access memory). Fast Page Mode offers high speed random access of memory cells within the same row. The KM44C256D is fabricated using Samsung's advanced silicon gate CMOS process to realize high band-width, low power consumption and high reliability.
There are some features of KM44C256D as follows: (1)fast page mode operation; (2)CAS-before-RAS refresh capability; (3)RAS-only and hidden refresh capability; (4)TTL (5 V) compatible inputs and outputs; (5)early write or output enable controlled write; (6)single +5 V±10% power supply; (7)JEDEC standard pinout; (8)available in plastic DIP, SOJ, ZIP packages.
The following is about the maximum ratings of KM44C256D: (1)voltage on any pin relative to VSS, VIN or VOUT: -1 to +7.0 V; (2)voltage on VCC supply relative to VSS, VCC: -1 to +7.0 V; (3)storage temperature, Tstg: -55 to +150; (4)power dissipation, PD: 600 mW; (5)short circuit output current, IOS: 50 mA.
KM44C256D
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The KM44C256C is a kind of CMOS high speed 262,144*4 dynamic random access memory. The design is optimized for high speed, high performance applications such as mini computers, graphics and high performance microprocessor computers. Besides, the KM44C256C is...
The features of KM440256BL can be summarized as (1)fast page mode operation; (2)CAS-belore-RAS refresh capebility; (3)RAS-only and hidden refresh capablility; (4)TTL compatible inpute and output; (5)early write or output enable controlled write; (6)common I/...
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