DescriptionThe KM48S16030AT is one member of KM48S16030 family. The KM48S16030 is 134,217,728 bits synchronous high datarate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits,fabricated with SAMSUNGs high performance CMOS technol-ogy. Synchronous design allows precise cycle control with theus...
KM48S16030AT: DescriptionThe KM48S16030AT is one member of KM48S16030 family. The KM48S16030 is 134,217,728 bits synchronous high datarate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits,fabricated with SA...
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Features: • Part Identification- KM48C8004B(5.0V, 8K Ref.)- KM48C8104B(5.0V, 4K Ref.)•...
PinoutSpecifications Parameter Symbol Value Unit Voltage on any pin relative to Vss VI...
The KM48S16030AT is one member of KM48S16030 family. The KM48S16030 is 134,217,728 bits synchronous high datarate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits,fabricated with SAMSUNGs high performance CMOS technol-ogy. Synchronous design allows precise cycle control with theuse of system clock I/O transactions are possible on every clcokcycle.
Features of the KM48S16030AT are:(1)JEDEC standard 3.3V power supply; (2) LVTTL compatible with multiplexed address; (3) Four banks operation ; (4)MRS cycle with address key programs -. CAS Latency (2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave); (5)All inputs are sampled at the positive going edge of the system clock.; (6)Burst Read Single-bit Write operation; (7)DQM for masking; (8) Auto & self refresh; (9) 64ms refresh period (4K cycle).
The absolute maximum ratings of the KM48S16030AT can be summarized as:(1)Voltage on any pin relative to Vss :-1.0 ~ 4.6V; (2)Voltage on VDD supply relative to Vss : -1.0 ~ 4.6V; (3)Storage temperature : -55 ~ +150°C; (4)Power dissipation: 1W; (5)Short circuit current: 50mA. If you want to know more information such as the electrical characteristics about the KM48S16030AT, please download the datasheet in www.seekic.com or www.chinaicmart.com.