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Part Number: KM48V8104C

 

 

 

 

Description: This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers...


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KM48V8104C General Description


This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricated using Samsung ¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

KM48V8104C Maximum Ratings

Parameter
Symbol
Value
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
-0.5 to +4.6
V
Voltage on VDD Supply Relative to VSS
VCC
-0.5 to +4.6
V
Storage Temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1
W
Short Circuit Output Current
IOS
50
mA

KM48V8104C Features

• Extended Data Out Mode operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• +3.3V±0.3V power supply

KM48V8104C Connection Diagram

KM48V8104C  Connection Diagram

KM48V8104C datasheet

KM48V8104C
PDF/DataSheet Download

  • Datasheet: KM48V8104C
  • File Size: 397547 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

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