Features: VDSS=-20V, ID=-4.5A.Drain-Source ON Resistance.: RDS(ON)=60m (Max.) @ VGS=-4.5V,.ID=-4.5A: RDS(ON)=110m (Max.) @ VGS=-2.5V,.ID=-3.3ASuper High Dense Cell Design for Extremely Low RDS(ON)PinoutSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDSS -2...
KMA4D5P20X: Features: VDSS=-20V, ID=-4.5A.Drain-Source ON Resistance.: RDS(ON)=60m (Max.) @ VGS=-4.5V,.ID=-4.5A: RDS(ON)=110m (Max.) @ VGS=-2.5V,.ID=-3.3ASuper High Dense Cell Design for Extremely Low RDS(ON)Pi...
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| Parameter |
Symbol |
Ratings |
Unit | |
| Drain-Source Voltage |
VDSS |
-20 |
V | |
| Gate-Source Voltage |
VGSS |
±12 |
V | |
| Drain Current | DC |
ID |
±4.5 |
A |
| Pulsed |
IDP* |
±16 |
A | |
| Continuous Source Current |
IS |
-1.3 |
A | |
| Drain Power Dissipation | Ta=25 |
PD |
2.0 |
W |
| Ta=70 |
1.3 | |||
| Maximum Junction Temperature |
Tj |
150 |
||
| Storage Temperature Range |
Tstg |
-55 150 |
||
| Thermal Resistance, Junction to Ambient |
RthJA * |
62.5 |
/W | |