KMB010P30QA Selling Leads, Price trend, KMB010P30QA DataSheet download, circuit diagram from SeekIC.com

Features: ·VDSS=-30V, ID=-10A.·Drain-Source ON Resistance.RDS(ON) =20m (Max.) @ VGS=-10VRDS(ON) =28m (Max.) @ VGS=-4.5V·Super High Dense Cell DesignPinoutSpecifications CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage VDSS -30 V Gate Source Voltage VGSS ...

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SeekIC No. : 004386264 Detail

KMB010P30QA: Features: ·VDSS=-30V, ID=-10A.·Drain-Source ON Resistance.RDS(ON) =20m (Max.) @ VGS=-10VRDS(ON) =28m (Max.) @ VGS=-4.5V·Super High Dense Cell DesignPinoutSpecifications CHARACTERISTIC SYMB...

KMB010P30QA Data Sheet

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Part Number:: KMB010P30QA
Supply Ability:: 5000

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Upload time: 2024/4/27

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Features: VDSS= 60V, ID= 60ADrain-Source ON Resistance :RDS(ON)=14m (Max.) @VGS = 10VSpecification...
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Features: ·VDSS=-30V, ID=-14A.·Drain-Source ON Resistance.RDS(ON) =10m (Max.) @ VGS=-10VRDS(ON) =1...

Product Details

Description

Features:

·VD_SS=-30V, I_D=-10A.
·Drain-Source ON Resistance.
R_DS(ON) =20m (Max.) @ V_GS=-10V
R_DS(ON) =28m (Max.) @ V_GS=-4.5V
·Super High Dense Cell Design

Pinout

Connection Diagram

Specifications

CHARACTERISTIC		SYMBOL	PATING	UNIT
Drain Source Voltage		V_DSS	-30	V
Gate Source Voltage		V_GSS	±25	V
Drain Current	DC	I_D*	-10	A
Drain Current	Pulsed	I_DP	-50	A
Drain Source Diode Forward Current		I_S	-1.7	A
Drain Power Dissipation		P_D*	2.0	W
Maximum Junction Temperature		T_j	150
Storage Temperature Range		T_stg	-55~150
Thermal Resistance, Junction to Ambient		R_thJA*	62.5	/W

Note : *Surface Mounted on FR4 Board

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance,, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS.

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KMB010P30QA

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