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KMM366S1623CTY

Features: • Performance range Part No. Max Freq. (Speed) KMM366S1623CTY-GH 100MHz (10ns @ CL=2) KMM366S1623CTY-GL 100MHz (10ns @ CL=3)• Burst mode operation• Auto & self refresh capability (4096 Cycles/64ms)• LVTTL compatible inputs and out...

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SeekIC No. : 004386302 Detail

KMM366S1623CTY: Features: • Performance range Part No. Max Freq. (Speed) KMM366S1623CTY-GH 100MHz (10ns @ CL=2) KMM366S1623CTY-GL 100MHz (10ns @ CL=3)• Burst mode operation...

KMM366S1623CTY Data Sheet

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Part Number:
KMM366S1623CTY
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Performance range

Part No.
Max Freq. (Speed)
KMM366S1623CTY-GH
100MHz (10ns @ CL=2)
KMM366S1623CTY-GL
100MHz (10ns @ CL=3)

• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs Latency (Access from column address)   Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM
• PCB : Height (1,150mil), double sided component



Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
16
W
Short circuit current
IOS
50
mA

Note :Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
          Functional operation should be restricted to recommended operating condition.
          Exposure to higher than recommended voltage for extended periods of time could affect device reliability.


Description

The Samsung KMM366S1623CTY is a 16M bit x 64 Synchronous  Dynamic RAM high density memory module. The Samsung KMM366S1623CTY consists of sixteen CMOS 8M x 8 bit with  4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy  substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM.

The KMM366S1623CTY is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.




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