KMM5364003BSW

Features:

• Part Identification
   - KMM5364003BSW(4K cycles/64ms Ref, TSOP, Solder)
• Fast Page Mode Operation
• CAS-before-RAS & Hidden Refresh capability
• RAS-only refresh capability
• TTL compatible inputs and outputs
• Single +5V±10% power supply
• JEDEC standard PDpin & pinout
• PCB : Height(1000mil), single sided component


Specifications

Item	Symbol	Rating	Unit
Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current	VIN, VOUT VCC Tstg PD IOS	-1 to +7.0 -1 to +7.0 -55 to +125 3 50	V V W mA

* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability.

Description

The Samsung KMM5364003BSW is a 4Mx36bits Dynamic RAM  high density memory module. The Samsung KMM5364003BSW consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5364003BSW is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets