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KQB6N70

Features: `6.2A, 700 V. RDS(ON) = 1.5 @ VGS = 10 V`Low gate charge (typical 130nC)`Low Crss(typical 15pF)`Fast switching`100% avalanche tested`lmproved dv/dt capabilitySpecifications Parameter Symbol Rating Unit Drain to Source Voltage VDSS 700 V Drain Current Co...

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SeekIC No. : 004386825 Detail

KQB6N70: Features: `6.2A, 700 V. RDS(ON) = 1.5 @ VGS = 10 V`Low gate charge (typical 130nC)`Low Crss(typical 15pF)`Fast switching`100% avalanche tested`lmproved dv/dt capabilitySpecifications Paramete...

KQB6N70 Data Sheet

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Part Number:
KQB6N70
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/18

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Product Details

Description



Features:

`6.2A, 700 V. RDS(ON) = 1.5 @ VGS = 10 V
`Low gate charge (typical 130nC)
`Low Crss(typical 15pF)
`Fast switching
`100% avalanche tested
`lmproved dv/dt capability


Specifications

Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
700
V
Drain Current Continuous (TC=25)
ID
6.2
A
Drain Current Continuous (TC=100)
3.9
A
Drain Current Pulsed *1
IDM
24.8
A
Gate-Source Voltage
VGSS
±30
V
Single Pulsed Avalanche Energy*2
EAS
600
mJ
Avalanche Current *1
IAR
6.2
A
Repetitive Avalanche Energy *1
EAR
14.2
mJ
Peak Diode Recovery dv/dt *3
dv/dt
4.5
V/ns
Power dissipation @ TA=25
PD
3.13
W
Power dissipation @ TC=25
Derate above 25
PD
142
W
1.14
W/
Operating and Storage Temperature
TJ, TSTG
-55 to150
Maximum lead temperature for soldering
purposes,1/8" from case for 5 seconds
TL
300
Thermal Resistance Junction to Case
RJC
0.88
/W
Thermal Resistance Junction to Ambient *4
RJA
40
/W
Thermal Resistance Junction to Ambient
RJA
62.5
/W
*1 Repetitive Rating:Pulse width limited by maximum junction temperature
*2 l=40mH,IAS=3.4A,VDD=50V,RG=25 ,Startion TJ=25
*3 ISD3.4A,di/dt200A/ S,VDDBVDSS,Startiong TJ=25


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