KRF7105

Features: ·Advanced Process Technology·Ultra Low On-Resistance·Dual N and P Channel Mosfet·Surface Mount·Available in Tape & Reel·Dynamic dv/dt Rating·Fast SwitchingSpecifications Parameter Symbol N-Channel P-Channel Unit Continuous Drain Current,VGS@10V , Ta = 25 ...

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SeekIC No. : 004387352 Detail

KRF7105: Features: ·Advanced Process Technology·Ultra Low On-Resistance·Dual N and P Channel Mosfet·Surface Mount·Available in Tape & Reel·Dynamic dv/dt Rating·Fast SwitchingSpecifications Paramet...

floor Price/Ceiling Price

Part Number:
KRF7105
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

·Advanced Process Technology
·Ultra Low On-Resistance
·Dual N and P Channel Mosfet
·Surface Mount
·Available in Tape & Reel
·Dynamic dv/dt Rating
·Fast Switching





Specifications

Parameter
Symbol
N-Channel
P-Channel
Unit
Continuous Drain Current,VGS@10V , Ta = 25
ID
3.5
-2.3
A
Continuous Drain Current ,VGS@10V , Ta = 70
ID
2.8
-1.8
Pulsed Drain Current *1
IDM
14
-10
Power Dissipation @Ta= 25
PD
2.0
W
Linear Derating Factor
0.016
Peak Diode Recovery dv/dt *2 dv/dt 3.0 -3.0 V/ ns
Gate-to-Source Voltage
VGS
±20
V
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Maximum Junction-to-Ambient *3
RJA
62.5
/W

*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 3.5A, di/dt 90A/ s, VDD V(BR)DSS, TJ 150 P-Channel ISD -2.3A, di/dt 90A/ s, VDD V(BR)DSS, TJ 150
*3 Surface mounted on FR-4 board, t 10sec.






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