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KRF7319

Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET·Surface Mount·Fully Avalanche RatedSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 A Continuous Drain Current *5 Ta = 25 ID 6.5 -4.9 Continuous D...

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SeekIC No. : 004387361 Detail

KRF7319: Features: ·Generation V Technology·Ultra Low On-Resistance·Dual N and P Channel MOSFET·Surface Mount·Fully Avalanche RatedSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-S...

KRF7319 Data Sheet

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Part Number:
KRF7319
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Generation V Technology
·Ultra Low On-Resistance
·Dual N and P Channel MOSFET
·Surface Mount
·Fully Avalanche Rated




Specifications

Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 30 -30 A
Continuous Drain Current *5 Ta = 25 ID 6.5 -4.9
Continuous Drain Current *5 Ta = 70 ID 5.2 -3.9
Pulsed Drain Current IDM 30 -30
Continuous Source Current (Diode Conduction) IS 2.5 -2.5 A
Power Dissipation @Ta= 25 *4 PD 20 W
Power Dissipation @Ta= 70 *4 1.3 W
Single Pulse Avalanche Energy EAS 82 140 mJ
Avalanche Current IAR 40 -2.8 V
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt *2 dv/dt 5.0 -5 V/ ns
Gate-to-Source Voltage VGS ±20 V
Junction and Storage Temperature Range TJ, TSTG -55 to + 150
Maximum Junction-to-Ambient*4 RJA 62.5 /W





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