Transistors Bipolar (BJT) PNP Epitaxial Sil
KSA539YBU: Transistors Bipolar (BJT) PNP Epitaxial Sil
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| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 45 V | ||
| Emitter- Base Voltage VEBO : | - 5 V | Maximum DC Collector Current : | 0.2 A | ||
| DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-92 | Packaging : | Bulk |
| Technical/Catalog Information | KSA539YBU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Current - Collector (Ic) (Max) | 200mA |
| Power - Max | 400mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 50mA, 1V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 15mA, 150mA |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-92 |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | KSA539YBU KSA539YBU |