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KSB1116ALBU: Transistors Bipolar (BJT) PNP Epitaxial Sil

KSB1116ALBU Data Sheet

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Part Number:: KSB1116ALBU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/15

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KSB1015 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage -...
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Transistors Bipolar (BJT) PNP Epitaxial Sil
KSB1015OTU evaluate
US $1.12 - 2.13 / Piece

Transistors Bipolar (BJT) PNP Epitaxial Sil

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Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	60 V
Emitter- Base Voltage VEBO :	- 6 V	Maximum DC Collector Current :	1 A
DC Collector/Base Gain hfe Min :	135	Configuration :	Single
Maximum Operating Frequency :	120 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Bulk

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 6 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Package / Case : TO-92
Maximum DC Collector Current : 1 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 135
Maximum Operating Frequency : 120 MHz

Parameters:

Technical/Catalog Information	KSB1116ALBU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	1A
Power - Max	750mW
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic	300mV @ 50mA, 1A
Frequency - Transition	120MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSB1116ALBU KSB1116ALBU

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KSB1116ALBU

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