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KSB810YTA_Q

Transistors Bipolar (BJT) PNP Epitaxial Transistor

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SeekIC No. : 00213521 Detail

KSB810YTA_Q: Transistors Bipolar (BJT) PNP Epitaxial Transistor

KSB810YTA_Q Data Sheet

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Part Number:
KSB810YTA_Q
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/29

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 25 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.7 A
DC Collector/Base Gain hfe Min : 120 at 100 mA at 1 V Configuration : Single
Maximum Operating Frequency : 160 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92S
Packaging : Ammo    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Ammo
Collector- Emitter Voltage VCEO Max : 25 V
Maximum DC Collector Current : 0.7 A
Maximum Operating Frequency : 160 MHz
Package / Case : TO-92S
DC Collector/Base Gain hfe Min : 120 at 100 mA at 1 V


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