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SeekIC No. : 00211144 Detail

KSB811YTA: Transistors Bipolar (BJT) PNP Epitaxial Transistor

KSB811YTA Data Sheet

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Part Number:: KSB811YTA
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2025/12/4

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KSB810 evaluate
Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage -...
KSB810OBU evaluate
Transistors Bipolar (BJT)
KSB810OTA evaluate
Transistors Bipolar (BJT)

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	25 V
Emitter- Base Voltage VEBO :	- 5 V	Maximum DC Collector Current :	1 A
DC Collector/Base Gain hfe Min :	70	Configuration :	Single
Maximum Operating Frequency :	110 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Ammo

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
DC Collector/Base Gain hfe Min : 70
Mounting Style : Through Hole
Package / Case : TO-92
Packaging : Ammo
Maximum DC Collector Current : 1 A
Collector- Emitter Voltage VCEO Max : 25 V
Maximum Operating Frequency : 110 MHz

Parameters:

Technical/Catalog Information	KSB811YTA
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	1A
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A
Frequency - Transition	110MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92S
Packaging	Tape & Box (TB)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSB811YTA KSB811YTA

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KSB811YTA

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