KSC1070

KSC1070 is an NPN epitaxial silicon transistor. It is disk mold, and intended to used in UHF, TV, TUNER, RF amplifierlifier and mixer.

The features of KSC1070 can be summarized as:(1)high PG (PG: 18dB); (2) Low NF (NF: 2.8dB, @900MHz).

The Absolute maximum ratings (Ta=25) of KSC1070 can be summarized as: (1)Collector-Base Voltage (Vceo): 30 V; (2)Collector-Emitter Voltage (Vceo): 25 V; (3)Emitter-Base Voltage (Veeo): 3.0 V; (4)Collector Current (Ic): 20mA; (5)Collector Dissipation (Pc): 200mW; (6)Junction Temperature (Tj): 150; (7)Storage Temperature (Tstag): -55~150.

The Electrical characteristics (Ta=25) of KSC1070 can be summarized as: (1)Max Collector Cutoff Current (ICBO): 0.1A, on the condition of VCB=25V, IE=0mA; (2)Min DC Current Gain (hFE): 40, on the condition of VCE=10V, IC=3mA; (3)Typ DC Current Gain (hFE): 80, on the condition of VCE=10V, IC=3mA; (4)Max DC Current Gain (hFE): 200, on the condition of VCE=10V, IC=3mA; (5)Min Current Gain-Bandwidth Product (fT): 750MHz, on the condition of VCE=10V, IE=-3mA; (6)Typ Current Gain-Bandwidth Product (fT): 1000MHz, on the condition of VCE=10V, IE=-3mA; (7)Typ Output Capacitance (Cob): 0.55pF, on the condition of f=1MHz, VCB=10V, IE=0mA; (8)Max Output Capacitance (Cob): 0.8pF, on the condition of f=1MHz, VCB=10V, IE=0mA; (9)Typ Noise Figure (NF): 2.8dB, on the condition of f=900MHz, VCB=10V, IE=-3mA; (10)Max Noise Figure (NF): 4.0dB, on the condition of f=900MHz, VCB=10V, IE=-3mA; (11)Min Power Gain (PG): 14dB, on the condition of VCB=10V, IE=-3mA; (12)Typ Power Gain (PG): 18dB, on the condition of VCB=10V, IE=-3mA; (13)Min AGC Current: Only to C1070 (IAGC): -8mA, on the condition of IE of PG -30dB, f=900MHZ; (14)Max AGC Current: Only to C1070 (IAGC): -11mA, on the condition of IE of PG -30dB, f=900MHZ.