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KSC3503DS

Transistors Bipolar (BJT) NPN Epitaxial Sil

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KSC3503DS: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSC3503DS Data Sheet

floor Price/Ceiling Price

US $ .12~.2 / Piece | Get Latest Price
Part Number:
KSC3503DS
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.2
  • $.17
  • $.14
  • $.12
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 300 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 150 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-126
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 0.1 A
Collector- Emitter Voltage VCEO Max : 300 V
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Maximum Operating Frequency : 150 MHz
Package / Case : TO-126


Parameters:

Technical/Catalog InformationKSC3503DS
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)300V
Current - Collector (Ic) (Max)100mA
Power - Max7W
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 10V
Vce Saturation (Max) @ Ib, Ic600mV @ 2mA, 20mA
Frequency - Transition150MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-126
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSC3503DS
KSC3503DS



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