KSC5603D

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 20
Packaging : Bulk
Package / Case : TO-220
Collector- Emitter Voltage VCEO Max : 800 V
Emitter- Base Voltage VEBO : 12 V
Maximum Operating Frequency : 5 MHz


Application

• Wide Safe Operating Area
• Built-in Free Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time


Specifications

Symbol	Parameter	Value	Units
VCBO	Collector-Base Voltage	1600	V
VCEO	Collector- Emitter Voltage	800	V
VEBO	Emitter-Base Voltage	12	V
IC	Collector Current(DC)	3	A
ICP	*Collector Current (Pulse)	6	A
IB	Base Current(DC)	2	A
IBP	*Base Current(Pulse)	4	A
PC	Collector Dissipation (Tc=25)	100	W
TJ	Junction Temperature	150
TSTG	Storage Temperature	-65 ~ 150

* Pulse Test: Pulse Width=5ms, Duty Cycle 10%


Parameters:

Technical/Catalog Information	KSC5603D
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	800V
Current - Collector (Ic) (Max)	3A
Power - Max	100W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 400mA, 3V
Vce Saturation (Max) @ Ib, Ic	1.25V @ 25mA, 250mA
Frequency - Transition	5MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSC5603D KSC5603D