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KSD227GTA

Transistors Bipolar (BJT) NPN Epitaxial Transistor

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SeekIC No. : 00212795 Detail

KSD227GTA: Transistors Bipolar (BJT) NPN Epitaxial Transistor

KSD227GTA Data Sheet

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Part Number:
KSD227GTA
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 25 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.3 A
DC Collector/Base Gain hfe Min : 70 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Kinked Lead Packaging : Ammo    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
DC Collector/Base Gain hfe Min : 70
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Ammo
Collector- Emitter Voltage VCEO Max : 25 V
Maximum DC Collector Current : 0.3 A
Package / Case : TO-92 Kinked Lead


Parameters:

Technical/Catalog InformationKSD227GTA
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)25V
Current - Collector (Ic) (Max)300mA
Power - Max400mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 30mA, 1V
Vce Saturation (Max) @ Ib, Ic400mV @ 30mA, 300mA
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingTape & Box (TB)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSD227GTA
KSD227GTA



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