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KSD261GBU

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00210563 Detail

KSD261GBU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSD261GBU Data Sheet

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Part Number:
KSD261GBU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 20 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 120 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Bulk    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 20 V
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum DC Collector Current : 0.5 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 120


Parameters:

Technical/Catalog InformationKSD261GBU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)20V
Current - Collector (Ic) (Max)500mA
Power - Max500mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 500mA
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSD261GBU
KSD261GBU



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