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KSD362R

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00210327 Detail

KSD362R: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSD362R Data Sheet

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Part Number:
KSD362R
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 70 V
Emitter- Base Voltage VEBO : 8 V Maximum DC Collector Current : 5 A
DC Collector/Base Gain hfe Min : 20 Configuration : Single
Maximum Operating Frequency : 10 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
DC Collector/Base Gain hfe Min : 20
Maximum DC Collector Current : 5 A
Packaging : Bulk
Emitter- Base Voltage VEBO : 8 V
Package / Case : TO-220
Maximum Operating Frequency : 10 MHz
Collector- Emitter Voltage VCEO Max : 70 V


Parameters:

Technical/Catalog InformationKSD362R
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)70V
Current - Collector (Ic) (Max)5A
Power - Max40W
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 500mA, 5A
Frequency - Transition10MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSD362R
KSD362R



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