KSD880OPATU

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00212029 Detail

KSD880OPATU: Transistors Bipolar (BJT) NPN Epitaxial Sil

floor Price/Ceiling Price

Part Number:
KSD880OPATU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2019/8/24

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 60 Configuration : Single
Maximum Operating Frequency : 3 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Packaging : Tube
Maximum DC Collector Current : 3 A
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Frequency : 3 MHz
DC Collector/Base Gain hfe Min : 60
Package / Case : TO-220


Parameters:

Technical/Catalog InformationKSD880OPATU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)3A
Power - Max30W
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 300mA, 3A
Frequency - Transition3MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSD880OPATU
KSD880OPATU



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