KSE13003H1AS

Transistors Bipolar (BJT) NPN Si Transistor

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SeekIC No. : 00211761 Detail

KSE13003H1AS: Transistors Bipolar (BJT) NPN Si Transistor

floor Price/Ceiling Price

Part Number:
KSE13003H1AS
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2019/8/22

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 1.5 A
DC Collector/Base Gain hfe Min : 8 Configuration : Single
Maximum Operating Frequency : 4 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-126
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
DC Collector/Base Gain hfe Min : 8
Maximum DC Collector Current : 1.5 A
Packaging : Bulk
Package / Case : TO-126
Emitter- Base Voltage VEBO : 9 V
Maximum Operating Frequency : 4 MHz


Parameters:

Technical/Catalog InformationKSE13003H1AS
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)1.5A
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce9 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 500mA
Frequency - Transition4MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-126
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSE13003H1AS
KSE13003H1AS



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