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KSE181STU: Transistors Bipolar (BJT) NPN Epitaxial Sil

KSE181STU Data Sheet

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Part Number:: KSE181STU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2025/12/4

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Transistors Bipolar (BJT) NPN Si Transistor

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	60 V
Emitter- Base Voltage VEBO :	7 V	Maximum DC Collector Current :	3 A
DC Collector/Base Gain hfe Min :	50	Configuration :	Single
Maximum Operating Frequency :	50 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-126
Packaging :	Tube

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Packaging : Tube
Maximum DC Collector Current : 3 A
Emitter- Base Voltage VEBO : 7 V
DC Collector/Base Gain hfe Min : 50
Maximum Operating Frequency : 50 MHz
Package / Case : TO-126

Parameters:

Technical/Catalog Information	KSE181STU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	3A
Power - Max	12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	300mV @ 50mA, 500mA
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-126
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSE181STU KSE181STU

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KSE181STU

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