KSE350S

Transistors Bipolar (BJT) PNP Epitaxial Sil

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SeekIC No. : 00212246 Detail

KSE350S: Transistors Bipolar (BJT) PNP Epitaxial Sil

floor Price/Ceiling Price

Part Number:
KSE350S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2019/8/17

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 300 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 30 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-126 Packaging : Bulk    

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Maximum DC Collector Current : 0.5 A
Collector- Emitter Voltage VCEO Max : 300 V
DC Collector/Base Gain hfe Min : 30
Packaging : Bulk
Package / Case : TO-126


Parameters:

Technical/Catalog InformationKSE350S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)300V
Current - Collector (Ic) (Max)500mA
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Vce Saturation (Max) @ Ib, Ic-
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-126
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSE350S
KSE350S



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