KSE5742

Collector- Base Voltage VCBO :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Maximum Operating Temperature : + 150 C
Package / Case : TO-220
Maximum DC Collector Current : 8 A
Maximum Collector Cut-off Current : 1000 uA
Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 8 V
Power Dissipation : 80 W


Specifications

Symbol	Parameter	Value	Units
BVCBO(sus)	Collector-Emitter Sustaining Voltage ..........................................: KSE5740 ..........................................: KSE5741 ..........................................: KSE5742	300 350 400	V V V
VCEO	Collector-Emitter Voltage : KSE5740 ........................................: KSE5741 ........................................: KSE5742	600 700 800	V V V
VEBO	Emitter-Base Voltage	8	V
IC	Collector Current (DC)	8	A
ICP	*Collector Current (Pulse)	16	A
IB	Base Current (DC)	2.5	A
IBP	*Base Current (Pulse)	5	A
PC	Collector Dissipation	80	W
TJ	Junction Temperature	150	oC
TSTG	Storage Temperature	-65~150	oC

Parameters:

Technical/Catalog Information	KSE5742
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	8A
Power - Max	80W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic	2V @ 200mA, 4A
Frequency - Transition	-
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KSE5742 KSE5742