Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
KSH29CITU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 100 V |
| Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 1 A |
| DC Collector/Base Gain hfe Min : | 15 | Configuration : | Single |
| Maximum Operating Frequency : | 3 MHz | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | Through Hole | Package / Case : | TO-251 |
| Packaging : | Tube |
| Technical/Catalog Information | KSH29CITU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Current - Collector (Ic) (Max) | 1A |
| Power - Max | 1.56W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 4V |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 125mA, 1A |
| Frequency - Transition | 3MHz |
| Current - Collector Cutoff (Max) | 50A |
| Mounting Type | Through Hole |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | KSH29CITU KSH29CITU |