KSH29ITU

Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

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SeekIC No. : 00211764 Detail

KSH29ITU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

floor Price/Ceiling Price

Part Number:
KSH29ITU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 15 Configuration : Single
Maximum Operating Frequency : 3 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-251
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 40 V
DC Collector/Base Gain hfe Min : 15
Maximum Operating Frequency : 3 MHz
Maximum DC Collector Current : 1 A
Package / Case : TO-251


Parameters:

Technical/Catalog InformationKSH29ITU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)1A
Power - Max1.56W
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 1A, 4V
Vce Saturation (Max) @ Ib, Ic700mV @ 125mA, 1A
Frequency - Transition3MHz
Current - Collector Cutoff (Max)50A
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSH29ITU
KSH29ITU



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