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KSP05BU

Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

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SeekIC No. : 00212209 Detail

KSP05BU: Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

KSP05BU Data Sheet

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Part Number:
KSP05BU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 4 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 50 Configuration : Single
Maximum Operating Frequency : 100 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Package / Case : TO-92
Maximum Operating Frequency : 100 MHz
Emitter- Base Voltage VEBO : 4 V
Maximum DC Collector Current : 0.5 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 50


Parameters:

Technical/Catalog InformationKSP05BU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)500mA
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Frequency - Transition100MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names KSP05BU
KSP05BU



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