Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
KSP10TA: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 25 V | ||
Emitter- Base Voltage VEBO : | 3 V | DC Collector/Base Gain hfe Min : | 60 | ||
Configuration : | Single | Maximum Operating Frequency : | 650 MHz | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-92-3 Kinked Lead | Packaging : | Ammo |
Technical/Catalog Information | KSP10TA |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Frequency - Transition | 650MHz |
Noise Figure (dB Typ @ f) | - |
Current - Collector (Ic) (Max) | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 25V |
Gain | - |
Power - Max | 1W |
Compression Point (P1dB) | - |
Package / Case | TO-92 |
Packaging | Tape & Box (TB) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | KSP10TA KSP10TA |