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KT6464SSN0UBL-XX

Features: ` High density: 512 MB (64M x 64)` Cycle time: 10 ns (100 MHz) 7.5 ns (133 MHz)` JEDEC Standard 144 Pin Unbuffered SDRAM SODIMM Pinout` PC133 and PC100 Compliant` Single power supply of 3.3V ± 10%` Serial Presence Detect` LVTTL Compatible I/O and Clock` Unbuffered Control and Add...

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SeekIC No. : 004388309 Detail

KT6464SSN0UBL-XX: Features: ` High density: 512 MB (64M x 64)` Cycle time: 10 ns (100 MHz) 7.5 ns (133 MHz)` JEDEC Standard 144 Pin Unbuffered SDRAM SODIMM Pinout` PC133 and PC100 Compliant` Single power supply ...

KT6464SSN0UBL-XX Data Sheet

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Part Number:
KT6464SSN0UBL-XX
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`   High density: 512 MB (64M x 64)
`   Cycle time: 10 ns (100 MHz)
    7.5 ns (133 MHz)
`   JEDEC Standard 144 Pin Unbuffered SDRAM SODIMM Pinout
`   PC133 and PC100 Compliant
`   Single power supply of 3.3V ± 10%
`   Serial Presence Detect
`   LVTTL Compatible I/O and Clock
`   Unbuffered Control and Address Lines
`   Auto Precharge handled by SDRAM Devices
`   Refresh 8K rows every 64ms
`   Programmable Burst Type, Burst Length and CAS Latency of SDRAM Devices
`   Internal Pipeline Operation
`   Fully Synchronous all signals registered on positive edge of system clock
`   Package Height: 1.03 inches (+/- 10mils)


Specifications

Item Symbol Rating Unit
Supply voltage (VCC Relative to VSS) VCC -1.0 to +4.6 V
Input/Output Voltage VI/O -1.0 to +4.6 V
Operating temperature Topr 0 to +70 °C
Storage temperature Tstg -55 to +125 °C
Short circuit output current Iout ±50 MA



Description

This memory module KT6464SSN0UBL-XX is a high performance 512 Megabyte Unbuffered synchronous dynamic RAM module organized as 64M x 64 in a 144 pin Small Outline Dual In-Line Memory Module (SODIMM) package. KT6464SSN0UBL-XX  utilizes eight (8) 8Mx4X16 512MbitSDRAM1 devices in a TSOP II 400 mil package. A 256 Byte Serial EEPROM contains the module configuration information. The EEPROM can be configured to a customer's specifications.

These modules KT6464SSN0UBL-XX offer substantial advances in SDRAM operating performance, including the= ability to synchronously burst data at a high rate with automatic column-address generation, interleave between internal banks in order to hide precharge time, and the capability to randomly change column address on each clock cycle during burst.




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