KTA1504S-GR-RTK

The KTA1504S-GR-RTK belongs to the series of KTA1504S. The following is some information about KTA1504S. It is a kind of epitaxial planar transistor. It is widely used in general purpose application and switching application. The SOT-23 package is available. There are some features as follows. First is complementary to KTC3875S. The second is excellent hFE linearity: hFE(0.1 mA)/hFE(2 mA)=0.95(Typ.). Then is low noise: NF=1dB(Typ.), 10dB(Max.).

The following is about the maximum ratings of  KTA1504S-GR-RTKat Ta=25 unless otherwise specified. The VCBO (Collector-Base Voltage) is -50 V. The VCEO (Collector-Emitter Voltage) is -50 V. The VEBO (Emitter-Base Voltage) is -5 V. The IC (Collector Current) is -150 mA. The IB (Base Current) is -30 mA. The PC (Collector Power Dissipation) is 150 mW. The Tj,Tstg (Junction and Storage Temperature) is from -55 to 150.

What comes next is about the electrical characteristics KTA1504S-GR-RTK at Ta=25 unless otherwise specified. The maximum collector cut-off current (ICBO) is -0.1A at VCB=-50 V,IE=0. The maximum emitter cut-off current (IEBO) is -0.1A at VEB=-5 V,IC=0. The minimum DC current gain (hFE) is 70 and the maximum is 400 at VCE=-6 V, IC=-2 mA. The typical collector-emitter saturation voltage (VCE(sat)) is -0.1 V and the maximum is -0.3 V at IC=-100 mA, IB=-10 mA.