Features: ·Adoption of MBIT Processes.·Large Current Capacitance.·Low Collector-to-Emitter Saturation Voltage.·High-Speed Switching.·Ultrasmall Package Facilitates Miniaturization in end Products.·High Allowable Power Dissipation.·Complementary to KTC3532T.Specifications CHARACTERISTIC SYMBO...
KTA1532T: Features: ·Adoption of MBIT Processes.·Large Current Capacitance.·Low Collector-to-Emitter Saturation Voltage.·High-Speed Switching.·Ultrasmall Package Facilitates Miniaturization in end Products.·H...
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| CHARACTERISTIC | SYMBOL | RATING | UNIT | |
| Collector-Base Voltage | VCBO | -20 | V | |
| Collector-Emitter Voltage | VCEO | -20 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current | DC | IC | -1.5 | A |
| Pulse | ICP | -3 | ||
| Base Current | IB | -300 | mA | |
| Collector Power Dissipation | PC* |
0.9 | W | |
| Junction Temperature | T j |
150 | ||
| Storage Temperature Range | Tstg | -55~150 | ||