Features: ·Adoption of MBIT Processes.·Large Current Capacitance.·Low Collector-to-Emitter Saturation Voltage.·High-Speed Switching.·Ultrasmall Package Facilitates Miniaturization in end Products.·High Allowable Power Dissipation.·Complementary to KTA1532TSpecifications CHARACTERISTIC SYMBOL...
KTC3532T: Features: ·Adoption of MBIT Processes.·Large Current Capacitance.·Low Collector-to-Emitter Saturation Voltage.·High-Speed Switching.·Ultrasmall Package Facilitates Miniaturization in end Products.·H...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| CHARACTERISTIC | SYMBOL | RATING | UNIT | |
| Collector-Base Voltage | VCBO | 20 | V | |
| Collector-Emitter Voltage | VCEO | 20 | V | |
| Emitter-Base Voltage | VEBO | 5 | V | |
| Collector Current | DC | IC | 1.5 | A |
| Pulse | ICP | 3 | A | |
| Description | IB | 300 | mA | |
| Collector Power Dissipation | PC * | 0.9 | W | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Tstg | -55~150 | ||