KTC3875-GR-RTK

The KTC3875-GR-RTK is a type of KTC3875 which is classified by the range of hFE. The hFE of KTC3875-GR-RTK is from 200 to 400. The following is some information about KTC3875.

KTC3875-GR-RTK  is a kind of NPN silicon epitaxial planar transistor. It is widely used in general purpose application and switching application. The SOT-23 package is available. There are some features as follows. First is complementary to KTA1504. The second is excellent HFE linearity. Then is low noise. At last, it is lead-free.

The following is about the maximum ratings at Ta=25 unless otherwise specified. The VCBO (Collector-Base Voltage) is 60 V. The VCEO (Collector-Emitter Voltage) is 50 V. The VEBO (Emitter-Base Voltage) is 5 V. The IC (Collector Current -Continuous) is 150 mA. The IB (Base Current) is 30 mA. The PC (Collector Power Dissipation) is 150 mW. The Tj,Tstg (Junction and Storage Temperature) is from -55 to 150.

What comes next is about the electrical characteristics KTC3875-GR-RTK at Ta=25 unless otherwise specified. The minimum collector-base breakdown voltage (V(BR)CBO) is 60 V at IC=100A,IE=0. The minimum collector-emitter breakdown voltage (V(BR)CEO) is 50 V at IC=1 mA,IB=0. The minimum emitter-base breakdown voltage (V(BR)EBO) is 5 V at IE=100A,IC=0. The maximum collector cut-off current (ICBO) is 0.1A at VCB=60 V,IE=0. The maximum emitter cut-off current (IEBO) is 0.1A at VEB=5 V,IC=2 mA.