Purchase KTHC5513, In-stock KTHC5513 From SeekIC.
- Table of contents:
KTHC5513
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Suppliers
DataSheet
General Description
KTHC5513 Maximum Ratings
| Parameter | Symbol | N-Channel | P-Channel | Unit |
| Drain to source voltage | VDSS | 20 | 20 | V |
| Gate to source voltage | VGSS | ±12 | ±12 | V |
| Drain current Continuous *1 TA = 25 TA = 85 t 5 |
ID | 2.9 2.1 3.9 |
-2.2 -1.6 -3 |
A |
| Drain current Pulsed t = 10 s *1 | IDM | 12 | -9 | A |
| Total power dissipation t5 |
PD |
1.1
|
W | |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to 150 | ||
| Lead Temperature for Soldering Purposes | TL | 260 | ||
| Junction-to-Ambient *1 Steady State t 5 |
RJA | 110 60 |
/W | |
KTHC5513 Features
·Complementary N-Channel and P-Channel MOSFET
·Leadless SMD Package Featuring Complementary Pair
·Low RDS(on) in a ChipFET Package for High Efficiency Performance
·Low Profile ( 1.10 mm) Allows Placement in Extremely Thin
·Environments Such as Portable Electronics
·Leadless SMD Package Featuring Complementary Pair
·Low RDS(on) in a ChipFET Package for High Efficiency Performance
·Low Profile ( 1.10 mm) Allows Placement in Extremely Thin
·Environments Such as Portable Electronics
KTH2369
PDF/DataSheet Download
- Datasheet: KTH2369
- File Size: 316517 KB
- Manufacturer: KEC [KEC(Korea Electronics)]
- Click here to Download
- ·KTH2369A
- KEC [KEC(Korea Electronics)]
- EPITAXIAL PLANAR NPN TRANSISTOR (HIGH SPEED SWITCHING)
- 316517 KB
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