Features: ·Composite type with a PNP transistor and a Schottky barrier diodecontained in one package facilitating high-density mounting.·The KTX512T is formed with two chips, one being equivalent to the KTA1535T and the other the KDR411S, encapsulateinonepackages.·Ultrasmall package facilitates mi...
KTX512T: Features: ·Composite type with a PNP transistor and a Schottky barrier diodecontained in one package facilitating high-density mounting.·The KTX512T is formed with two chips, one being equivalent to...
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CHARACTERISTIC |
SYMBOL |
RATING |
UNIT | |
Collector-Base Voltage |
VCBO |
-20 |
V | |
Collector-Emitter Voltage |
VCEO |
-20 |
V | |
Emitter-Base Voltage |
VEBO |
-5 |
V | |
Collector Current | DC |
IC |
3 |
A |
Pulse |
ICP |
5 |
A | |
Base Current |
IB |
600 |
mA | |
Collector Power Dissipation |
PC * |
0.9 |
W | |
Junction Temperature |
Tj |
150 |
| |
Junction Temperature |
Tstg |
-55~150 |
|
CHARACTERISTIC |
SYMBOL |
RATING |
UNIT |
Peak Reverse Voltage |
VRRM |
40 |
V |
DC Reverse Voltage |
VR |
20 |
V |
Average Output Current |
ID |
0.5 |
A |
Peak Forward Surge Current |
IFSM |
3 |
A |
Junction Temperature |
Tj |
125 |
|
Storage Temperature Range |
Tstg |
-40~150 |