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Part Number: L2711

 

 

 

 

Description: Silicon VDMOS and LDMOStransistors designed specifically for broadband RF applicat...


Urgent Purchase

L2711 General Description


     Silicon VDMOS and LDMOS  transistors designed specifically for broadband RF applications.  Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.  
     "Polyfet"TM    process features low feedback and output capacitances resulting in high Ft  transistors with high input impedance and high efficiency.

L2711 Maximum Ratings

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
80 Watts
1.80/W
200
-65to150
8.0A
36V
36V
20V

L2711 datasheet

L2711
PDF/DataSheet Download

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