L34SF4BT

The L34SF4BT is designed as T-1 (3mm) infra-red emitting diode which made with gallium aluminum arsenide infrared emitting diode.

It has two features. (1)Mechanically and spectrally matched to the L32P3C phototransistor. (2)Both water clear lens and blue transparent lens available high power output. Those are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its power dissipation would be 100mW. (2)Its forward current would be 50mA. (3)Its peak forward current would be 1.2A. (4)Its reverse voltage would be 5V. (5)Its operating temperature range would be from -40°C to 85°C. (6)Its storage temperature range would be from -40°C to 85°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device. Those are all the main absolute maximum values.

Also some electrical characteristics are concluded as follow. (1)Its dice would be GaAlAs. (2)Its lens type would be blue transparent. (3)Its output power at 20mA would be min 2mW/sr and typ 4mW/sr. (4)Its output power at 50mA would be min 8mW/sr and typ 20mW/sr. (5)Its viewing angle would be 50°. (6)Its forward voltage would be typ 1.3V and max 1.7V with test conditions of If=20mA. (7)Its reverse current would have the maximum value of 10uA with test conditions of Vr=5V. (8)Its junction capacitance would be typ 90pF with test conditions of V=0V and f=1MHz. (9)Its peak spectral wavelength would be typ 880nm with test conditions of If=20mA. (10)Its spectral bandwidth would have a typical value of 50nm with test conditions of If=20mA. Those are all the main electrical characteristics.

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