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Part Number: L8821P

 

 

 

 

Description: Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for ...


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L8821P General Description


Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios,
Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"TM process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.

L8821P Maximum Ratings

Total
Device
Dissipation		 Junction to
Case Thermal
Resistance		 Maximum
Junction
Temperature		 Storage
Temperature		 DC Drain
Current		 Drain to
Gate
Voltage		 Drain to
Source
Voltage		 Gate to
Source
Voltage
30Watts 5.00 /W 150 -65 to 150 5.0A 36V 36V 20V

L8821P datasheet

L8821P
PDF/DataSheet Download

Find L8821P Suppliers

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    Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios,Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" TMprocess features of the L8801P low fe...

  • L88016

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    Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios,Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"TM process features of the L88016 low fe...

  • L8721P

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    Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" TMprocess features of teh L8721P low f...

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