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LBAS40XLT1G

Features: ·Low forward current·Guard ring protected·Low diode capacitance.Application·Ultra high-speed switching·Voltage clamping·Protection circuits.·Blocking diodes.Specifications Parameter Symbol Rating Unit Conditions Continuous reverse voltage VR 40 V Continuous forward cu...

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SeekIC No. : 004391323 Detail

LBAS40XLT1G: Features: ·Low forward current·Guard ring protected·Low diode capacitance.Application·Ultra high-speed switching·Voltage clamping·Protection circuits.·Blocking diodes.Specifications Parameter ...

LBAS40XLT1G Data Sheet

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Part Number:
LBAS40XLT1G
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Low forward current
·Guard ring protected
·Low diode capacitance.


Application

·Ultra high-speed switching
·Voltage clamping
·Protection circuits.
·Blocking diodes.


Specifications

Parameter Symbol Rating Unit Conditions
Continuous reverse voltage VR 40 V  
Continuous forward current IF 120 mA  
Repetitive Peak forward surge current IFSM 120 mA tp<1s;<0.5
Non-repetitive peak forward current IFSM 200 mA tp<10ms
Storage temperature Tstg -65 +150 °C  
Junction temperature Tj   °C  
Operating ambient temperature Tamb -65 +150 °C  



Description

LBAS40XLT1G Planar Schottky barrier diodes with an integrated guard ring for stress protection.


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