LC35V1000BTS

• Low-voltage operation: 3.0 to 3.6 V
• Wide operating temperature range: 40 to +85°C
• Access time: 70 ns (maximum): LC35V1000BM and LC35V1000BTS-70U.
• Low current drain
Standby mode: 0.05 A (typical*) at Ta = +25°C *:
When V_CC = 3.0 V
10.0 A (maximum) at Ta = +70°C
20.0 A (maximum) at Ta = +85°C
• Data retention voltage: 2.0 to 3.6 V
• No clock required (fully static circuits)
• Input/output shared function pins, 3-state output pins
• Package
32-pin SOP (525 mil) plastic package:
LC35V1000BM
32-pin TSOP (8 ´14 mm) plastic package:
LC35V1000BTS

*: For pulse widths under 30 ns: 2.0 V
Note: This chip may be destroyed if any stress in excess of the absolute maximum ratings is applied.

The LC35V1000BM and LC35V1000BTS-70U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high speed, low power, and a wide operating temperature range.This makes them optimal for use in systems that require high speed, low power, and battery backup. They also support easy memory expansion.