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LD1003S

Features: Trench Power JFET with low threshold voltage Vth.Device fully ON with Vgs = 0.7VOptimum for Low Side Buck ConvertersOptimized for Secondary Rectification in isolated DC-DCLow Rg and low Cds for high speed switchingNo Body Diode ; extremely low CdsAdded Fast Recovery Schottky Diode i...

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SeekIC No. : 004392944 Detail

LD1003S: Features: Trench Power JFET with low threshold voltage Vth.Device fully ON with Vgs = 0.7VOptimum for Low Side Buck ConvertersOptimized for Secondary Rectification in isolated DC-DCLow Rg and lo...

LD1003S Data Sheet

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Part Number:
LD1003S
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

Trench Power JFET with low threshold voltage Vth.
Device fully "ON" with Vgs = 0.7V
Optimum for "Low Side" Buck Converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
No "Body Diode"; extremely low Cds
Added Fast Recovery Schottky Diode in same package


Application

DC-DC Converters
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
Brick Modules
VRM Modules


Specifications

Parameter
Symbol
Ratings
Units
Drain-Source Voltage
VDS
24
V
Gate-Source Voltage
VGS
-10
V
Gate-Drain Voltage
VGD
-28
V
Continuous Drain Current
ID
50
A
Pulsed Drain Current
ID
100
A
Single Pulse Drain-to-Source Avalanche Energy at 25°C (VDD= 5VDC, IL=60APK, L=0.3mH, RG=100 )
EAS
220
mJ
Junction Temperature
TJ
-55 to 150°C
°C
Storage Temperature
TSTG
-65 to 150°C
°C
Lead Soldering Temperature, 10 seconds
T
260°C
°C
Power Dissipation (Derated at 25°C)
PD
80
W



Description

The Power JFET transistor LD1003S from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DC-DC switching applications. The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time. The transistor "No Body Diode" provides a very low associated parasitic capacitance Cds. A Schottky Diode is added for applications where a freewheeling diode is required. Ringing is also reduced so that a lower voltage device may be a better solution.




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