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LD1106S

Features: `Trench Power JFET with low threshold voltage Vth.`Device fully ON with Vgs = 0.7V`Optimum for Low Side Buck Converters`Optimized for Secondary Rectification in isolated DC-DC`Low Rg and low Cds for high speed switching`No Body Diode ; extremely low Cds`Added Fast Recovery Schottky ...

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SeekIC No. : 004392960 Detail

LD1106S: Features: `Trench Power JFET with low threshold voltage Vth.`Device fully ON with Vgs = 0.7V`Optimum for Low Side Buck Converters`Optimized for Secondary Rectification in isolated DC-DC`Low Rg a...

LD1106S Data Sheet

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Part Number:
LD1106S
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Trench Power JFET with low threshold voltage Vth.
`Device fully "ON" with Vgs = 0.7V
`Optimum for "Low Side" Buck Converters
`Optimized for Secondary Rectification in isolated DC-DC
`Low Rg and low Cds for high speed switching
`No "Body Diode"; extremely low Cds
`Added Fast Recovery Schottky Diode in same package


Application

·DC-DC Converters for DDR and Graphic designs
·Synchronous Rectifiers
·PC Motherboard Converters
·Step-down power supplies
·Brick Modules
·VRM Modules


Specifications

Parameter
Symbol
Ratings
Units

Drain-Source Voltage

VDS

15

V

Gate-Source Voltage
VGS
-10
V
Gate-Drain Voltage
VGD
-18
V
Continuous Drain Current
ID
30
A
Pulsed Drain Current
ID
60
A
Single Pulse Drain-to-Source Avalanche Energy at 25°C (VDD= 5VDC, IL=30APK, L=0.3mH, RG=100 )
EAS
120
mJ
Junction Temperature
TJ
-55 to 150°C
°C
Storage Temperature
TSTG
-65 to 150°C
°C
Lead Soldering Temperature, 10 seconds
T
260°C
°C
Power Dissipation (Derated at 25°C on large heat sink)
PD
60
W



Description

The Power JFET transistor LD1106S from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DC-DC switching applications. The LD1106S is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time. The transistor "No Body Diode" provides a very low associated parasitic capacitance Cds. A Schottky Diode is added for applications where a freewheeling diode is required. Ringing is also reduced so that a lower voltage device may be a better solution.




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