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LD242

Features: GaAs infrared emitting diode, fabricated in a liquid phase epitaxy processCathode is electrically connected to the caseHigh reliabilityWide beamSame package as BP 103, BPX 63, SFH 464, SFH 483DIN humidity category in acc. with DIN 40 040 GQGApplication IR remote control and sound transm...

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SeekIC No. : 004392980 Detail

LD242: Features: GaAs infrared emitting diode, fabricated in a liquid phase epitaxy processCathode is electrically connected to the caseHigh reliabilityWide beamSame package as BP 103, BPX 63, SFH 464, SF...

LD242 Data Sheet

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Part Number:
LD242
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process
Cathode is electrically connected to the case
High reliability
Wide beam
Same package as BP 103, BPX 63, SFH 464, SFH 483
 DIN humidity category in acc. with DIN 40 040 GQG


Application

IR remote control and sound transmission
Photointerrupters


Specifications

Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg
40 ... + 80
°C
Sperrspannung
Reverse voltage
VR
300
V
Durchlaßstrom, TC = 25 °C
Forward current
IF
3
mA
Stoßstrom, t 10 s, D = 0
Surge current
IFSM
470
A
Verlustleistung, TC = 25 °C
Power dissipation
Ptot
70
mW
Wärmewiderstand
Thermal resistance
RthJA
RthJL
450
160
K/W
K/W



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