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LD271H

Features: GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process High reliabilityHigh pulse handling capability long leads Available in groupsSame package as SFH 300, SFH 203Application IR remote control of hi-fi and TV-sets, video tape recorders, dimmers Remote control of var...

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SeekIC No. : 004392993 Detail

LD271H: Features: GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process High reliabilityHigh pulse handling capability long leads Available in groupsSame package as SFH 300, SFH 203App...

LD271H Data Sheet

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Part Number:
LD271H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process
High reliability
High pulse handling capability
long leads
Available in groups
 Same package as SFH 300, SFH 203


Application

IR remote control of hi-fi and TV-sets, video tape recorders, dimmers
Remote control of various equipment
 Photointerrupters


Specifications

Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg
 55 ... + 100
°C
Sperrschichttemperatur
Junction temperature
Tj
100
°C
Sperrspannung
Reverse voltage
VR
5
V
Durchlaßstrom
Forward current
IF
130
mA
Stoßstrom, t p=10 s, D = 0
Surge current
IFSM
3.5
A
Verlustleistung
Power dissipation
Ptot
220
mW
Wärmewiderstand
Thermal resistance
RthJA
330
K/W



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