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LE28FV4001M

Features: • Highly reliable 2 layer polysilicon CMOS flash EEPROM process• Read and write operations using a 3.3 V single-voltage power supply• High-speed access: 200 and 250 ns• Low power- Operating (read): 10 mA (maximum)- Standby: 20 µA (maximum)• Highly reli...

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SeekIC No. : 004393483 Detail

LE28FV4001M: Features: • Highly reliable 2 layer polysilicon CMOS flash EEPROM process• Read and write operations using a 3.3 V single-voltage power supply• High-speed access: 200 and 250 ns...

LE28FV4001M Data Sheet

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Part Number:
LE28FV4001M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Highly reliable 2 layer polysilicon CMOS flash EEPROM process
• Read and write operations using a 3.3 V single-voltage power supply
• High-speed access: 200 and 250 ns
• Low power
- Operating (read): 10 mA (maximum)
- Standby: 20 µA (maximum)
• Highly reliable read write
-Number of sector write cycles: 104 cycles
- Data retention: 10 years
• Address and data latches
• Sector erase function: 256 bytes per sector
• Self-timer erase/program
• Byte program time: 35 µs (maximum)
• Write complete detection function: Toggle bit/Data poling
• Hardware and software data protection functions
• Pin assignment conforms to the JEDEC byte-wide EEPROM standard.
• Package
SOP 32-pin (525 mil) plastic package: LE28FV4001M
TSOP 42-pin (10 * 14 mm) plastic package:LE28FV4001T
TSOP 40-pin (10* 14 mm) plastic package: LE28FV4001R


Pinout

Connection Diagram


Specifications

Parameter Symbol Ratings Unit Note
Supply voltage VCC 0.5 to +6.0 V 1
Input pin voltage VIN 0.5 to VCC + 0.5 V 1, 2
DQ pin voltage VOUT 0.5 to VCC + 0.5 V 1, 2
A9 pin voltage VA9 0.5 to +14.0 V 1, 3
Allowable power dissipation Pd max 600 mW 1, 4
Operating temperature Topr 0 to +70 1
Storage temperature Tstg 65 to +150 1
Note: 1. The device may be destroyed by the application of stresses in excess of the absolute maximum ratings.
          2. 1.0 V to VDD + 1.0 V for pulses less than 20 ns
          3. 1.0 V to +14 V for pulses less than 20 ns
          4. Ta = 25 °C


Description

The LE28FV4001M, T, R Series are 4 MEG flash memory products that feature a 542488-word × 8-bit organization and 3.3 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. The LE28FV4001M also supports high-speed data rewriting by providing a sector (256 bytes) erase function.




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