Purchase LET19060C, In-stock LET19060C From SeekIC.
Part Number: LET19060C
Description: The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power ...
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LET19060C
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DataSheet
General Description
LET19060C General Description
The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.
LET19060C Maximum Ratings
| Symbol | Parameter | Value | Unit |
| V(BR)DSS | Drain-Source Voltage | 65 | V |
| VGS | Gate-Source Voltage | -0.5 to +15 | V |
| ID | Drain Current | 7 | A |
| PDISS | Power Dissipation (@ Tc = 70 °C) | 130 | W |
| Tj | Max. Operating Junction Temperature | 200 | |
| TSTG | Storage Temperature | -65 to +150 |
LET19060C Features
• IS-97 CDMA PERFORMANCES
POUT = 7.5 W
EFF. = 18 %
• EDGE PERFORMANCES
POUT = 30 W
EFF. = 25 %
• GSM PERFORMANCES
POUT = 65 W
EFF. = 45 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT/OUTPUT MATCHING
• ESD PROTECTION
POUT = 7.5 W
EFF. = 18 %
• EDGE PERFORMANCES
POUT = 30 W
EFF. = 25 %
• GSM PERFORMANCES
POUT = 65 W
EFF. = 45 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT/OUTPUT MATCHING
• ESD PROTECTION
LET19060C
PDF/DataSheet Download
- Datasheet: LET19060C
- File Size: 35589 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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