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Part Number: LET9006

 

 

 

 

Description: The LET9006 is a common source N-Channel, en- hancement-mode lateral Field-Effect RF power transistor....


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LET9006 General Description


The LET9006 is a common source N-Channel, en- hancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9006  boasts  the  excellent gain,linearity  and  reliability of ST's latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. It is ideal for digital  cellular  BTS  applications requiring high linearity.

LET9006 Maximum Ratings

Symbol Parameter Value Unit
V(BR)DSS Drain-Source Voltage 65 V
VGS Gate-Source Voltage -0.5 to +15 V
ID Drain Current 1 A
PDISS Power Dissipation (@ Tc = 70 °C) 16 W
Tj Max. Operating Junction Temperature 150
TSTG Storage Temperature -65 to +150

LET9006 Features

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 6 W with 17 dB gain @ 960 MHz / 26V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
• SUPPLIED IN TAPE & REEL OF 3K UNITS

LET9006 datasheet

LET9006
PDF/DataSheet Download

  • Datasheet: LET9006
  • File Size: 41532 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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  • LET21008

    LET21008

    The LET21008 is a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET2...

  • LET21004

    LET21004

    The LET21004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET...

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    The LET20030S is a common source N-Channel,enhancement-mode lateral Field-Effect RF power ransistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 GHz. LET200...

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