The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9130 is designed for high gain and broadband performance ope...
The LET9085 is a common source N-Channel en-hancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9085 is designed for high gain and broadband performance op...
The LET9060S is a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET906...
The LET9060C is an N-Channel enhancement-mode lateral Field-Effect RF power transistor, designed for high gain broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1.0 GHz. LET9060C boasts the exce...
The LET9045S is a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. LET904...
The LET9006 is a common source N-Channel, en- hancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9...